Media Center
A multimedia mosaic of moments at GIST
GIST Excellence
[Press Release] Professor Moon-Ho Ham leads researcher team to synthesize large-area graphene at low-temperatures
- 엘리스 리
- REG_DATE : 2016.01.11
- HIT : 1038
Professor Moon-Ho Ham leads researcher team
to synthesize large-area graphene at low-temperatures
Large-area synthesis of graphene at 300° C published in Nature"s Scientific Reports
(Figure 1). (a) Photograph and OM image, (b) SEM image, and (c) Raman spectrum of continuous monolayer graphene film grown by oxygen-free APCVD at 300°C for 5 min.
Graphene is nothing more than a monolayer lattice of carbon atoms. However, there is enormous interest in graphene because of its numerous extraordinary properties, such as its physical strength and electrical characteristics. For industrial applications, chemical vapor deposition (CVD) is the preferred method for producing large amounts of high-quality graphene. However, graphene deposition with CVD requires a temperature between 800°-1,000° C, which prevents this expensive method from being used in electronic device manufacturing as the high-temperatures would severely damage the substrate and other components.
To overcome the current limitations of CVD graphene production, a research team at the Gwangju Institute of Science and Technology (GIST) led by Professor Moon-Ho has developed an atmospheric pressure CVD method called the "oxygen-free APCVD" method to synthesize graphene on Cu foils. In this method, the graphene growth stage is extended in the absence of residual oxidizing species that may influence the formation of amorphous and oxidized carbon layers. This method uses benzene as the carbon feedstock, and large-area excellent-quality continuous graphene sheets were synthesized on Cu foils at 300° C. The growth temperature was substantially reduced to as low as 100° C, which is the lowest temperature reported to date for pristine graphene produced by CVD. This cheaper CVD method would allow for the direct growth of graphene during the manufacturing process for electrical devices without damaging the underlying substrate or components.
The research entitled "Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure" was authored by Jisu Jang, Myungwoo Son, Sunki Chung, Kihyeun Kim, Chunhum Cho, Professor Byoung Hun Lee, and Professor Moon-Ho Ham and published in Nature"s Scientific Reports on December 10, 2015. The research was supported by the Global Frontier Program through the Global Frontier Hybrid Interface Materials of the National Research Foundation of Korea funded by the Ministry of Science, ICT & Future Plannin,and the Future Semiconductor Device Technology Development Program funded by Ministry of Trade, Industry & Energy and Korea Semiconductor Research Consortium.
(From left) Professor Moon-Ho Ham, student Myungwoo Son, and student Jisu Jang
Professor Moon-Ho Ham said, "Our method of atmospheric pressure CVD allows for the direct deposition of graphene onto substrates and will contribute to major advances in electrical device manufacturing processes for practical applications, such as CMOS back-end interconnects and flexible devices."