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[Press Release] Professor Kim Bong-joong identified the Ge nanowire growth pathways in ultralow temperature Ge nanowire growth pathways in ultralow temperature was identified -published in Nano Letters, “Implications for nanostructure formation on temperature-sensitive substrate” □ Using in situ electron microscopy to examine the creation and growth of nucleus of Ge nanowire, which has recently attracted interest, Korean researchers found that Ge nanowire can be integrated into nano-elements on temperature-sensitive liquid substrate such as plastic. The research finding is a big stride in overcoming obstacles seen in electronic elements (ex. transistor) and energy elements (ex. solar battery) in terms of the degree of integration, performance, and efficiency. ○ School of Materials Science and Engineering, Professor, Kim Bong-joong (main author) at Gwangju Institute of Science and Technology (GIST, President Young-Joon Kim) led the research in association with the IBM Watson Research Center, and Brookhaven National Laboratory in the U.S.. The research finding was published in the November edition of ‘Nano Letters’, prestigious academic journal in nano science. (Research title: Growth pathways in ultra-low temperature Ge nucleation from Au)